SF1601G thru SF1608G
Pb
SF1601G thru SF1608G
Pb Free Plating Product
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
ꢀ
ꢀ
ꢀ
Plating Power Supply|UPS
Amplifier and Sound Device System
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.03 grams
Doubler
Series Connection
Suffix "D"
Negative
Common Anode
Suffix "A"
Positive
Common Cathode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G
SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA
SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD
Common Cathode
UNIT
SYMBOL
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
V
DC
100
16.0
A
A
V
IF(AV)
Current TC
=100oC
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
V
F
0.98
1.3
1.7
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25oC
=125oC
uA
uA
nS
10.0
250
I
R
J
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
pF
oCW
C
J
R
JC
2.2
Operating Junction and Storage
Temperature Range
oC
-55 to + 150
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
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THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
