MUR2020CTR thru MUR2060CTR
Pb
MUR2020CTR/MUR2040CTR/MUR2060CTR
Pb Free Plating Product
20.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
.1(2.54)
.1(2.54)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Series
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Weight: 2.2 gram approximately
Suffix "CT"
Suffix "CTR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR2020CTR MUR2040CTR MUR2060CTR
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
20.0
200
1.3
A
A
V
IF(AV)
℃
(Total Device 2x10A=20A)
Current TC
=125
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Maximum Instantaneous Forward Voltage
V
F
0.98
120
1.7
(Per Diode/Per Leg)
@ 10.0 A
5.0
100
μA
μA
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25
℃
℃
I
R
J
=125
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
C
J
70
R
JC
2.0
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
