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GP1607D 参数 Datasheet PDF下载

GP1607D图片预览
型号: GP1607D
PDF下载: 下载PDF文件 查看货源
内容描述: 16.0安培双倍增串联通用整流二极管 [16.0 Ampere Dual Doubler Tandem General Purpose Rectifier Diodes]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 256 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号GP1607D的Datasheet PDF文件第2页  
GP1601D thru GP1607D
GP1601D thru GP1607D
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
®
Pb
Pb Free Plating Product
16.0 Ampere Dual Doubler Tandem General Purpose Rectifier Diodes
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.548(13.93)
.025(0.65)MAX
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Negative
Common Anode
Suffix "A"
Doubler
Tandem Polarity
Suffix "D"
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Units
V
V
V
A
Symbol
GP
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
50
35
50
GP
GP
GP
GP
GP
GP
1601D 1602D 1603D 1604D 1605D 1606D 1607D
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@T
C
= 100
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
Maximum DC Reverse Current @ T
C
=25
o
C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Typical Junction Capacitance ( Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
100
70
100
200
140
200
400
280
400
16.0
600
420
600
800
560
800
1000
700
1000
150
1.1
10
250
50
1.5
- 65 to + 150
A
V
uA
uA
pF
o
C/W
o
C
Cj
R
θJC
T
J
,T
STG
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to Case Mounted on Heatsink size 2” x 3” x 0.25” Al-Plate.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/