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GP1607A 参数 Datasheet PDF下载

GP1607A图片预览
型号: GP1607A
PDF下载: 下载PDF文件 查看货源
内容描述: 16.0安培双共阳极通用整流二极管 [16.0 Ampere Dual Common Anode General Purpose Rectifier Diodes]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 255 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号GP1607A的Datasheet PDF文件第2页  
GP1601A thru GP1607A
GP1601A thru GP1607A
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
®
Pb
Pb Free Plating Product
16.0 Ampere Dual Common Anode General Purpose Rectifier Diodes
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.548(13.93)
.025(0.65)MAX
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Negative
Common Anode
Suffix "A"
Doubler
Tandem Polarity
Suffix "D"
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Units
V
V
V
A
Symbol
GP
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
50
35
50
GP
GP
GP
GP
GP
GP
1601A 1602A 1603A 1604A 1605A 1606A 1607A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@T
C
= 100
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
Maximum DC Reverse Current @ T
C
=25
o
C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Typical Junction Capacitance ( Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
100
70
100
200
140
200
400
280
400
16.0
600
420
600
800
560
800
1000
700
1000
150
1.1
10
250
50
1.5
- 65 to + 150
A
V
uA
uA
pF
o
C/W
o
C
Cj
R
θJC
T
J
,T
STG
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to Case Mounted on Heatsink size 2” x 3” x 0.25” Al-Plate.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/