FF60UP30DN
®
60
50
40
I
F
(A)
30
20
T
J
=25°C
100
I
F
=60A
V
R
=150V
T
J
=125°C
80
T
J
=125°C
t
rr
(ns)
60
I
F
=30A
40
I
F
=15A
10
0
0
20
0.9
1.2
1.8
1.5
V
F
（V）
Fig1. Forward Voltage Drop vs Forward Current
0.3
0.6
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig2. Reverse Recovery Time vs di
F
/dt
200
24
20
16
I
F
=60A
V
R
=150V
T
J
=125°C
600
500
400
Q
rr
(nc)
I
F
=30A
I
F
=15A
V
R
=150V
T
J
=125°C
I
RRM
(A)
12
8
4
0
0
300
200
100
0
I
F
=60A
I
F
=30A
I
F
=15A
400
600
1000
800
di
F
/dt（A/μs）
Fig3. Reverse Recovery Current vs di
F
/dt
200
0
400
600
800
1000
di
F
/dt（A/μs）
Fig4. Reverse Recovery Charge vs di
F
/dt
200
1.2
1
10
1
0.8
Z
thJC
(K/W)
K
f
0.6
t
rr
10
-1
0.4
0.2
0
I
RRM
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
Q
rr
-2
100 125 150
75
T
J
(°C)
Fig5. Dynamic Parameters vs Junction Temperature
0
25
50
10
-3 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
