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F60UP20DN 参数 Datasheet PDF下载

F60UP20DN图片预览
型号: F60UP20DN
PDF下载: 下载PDF文件 查看货源
内容描述: [60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode]
分类和应用:
文件页数/大小: 3 页 / 784 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
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F60UP20DN
F60UP20DN
Pb Free Plating Product
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode
®
Pb
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
TO-3PB/TO-3PN
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Anode
Anode
Cathode
GENERAL DESCRIPTION
F60UP20DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
θJC
Weight
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
T
C
=100°C, Per Diode
T
C
=25°C unless otherwise specified
Test Conditions
Values
200
200
30
60
53
300
156
-40 to +150
-40 to +150
Recommended(M3)
Junction-to-Case
1.1
0.8
6.0
Unit
V
V
A
A
A
A
W
°C
°C
N·m
°C /W
g
T
C
=100°C, Per Package
T
C
=100°C, Per Diode
T
J
=45°C, t=10ms, 50Hz, Sine
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
Parameter
Reverse Leakage Current
Test Conditions
V
R
=200V
V
R
=200V, T
J
=125°C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
I
F
=30A
I
F
=30A, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
0.86
--
22
26
2.3
40
4.1
Max.
25
250
1.1
0.95
--
--
--
--
--
Unit
µA
µA
V
V
ns
ns
A
ns
A
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=100V, I
F
=30A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=100V, I
F
=30A
di
F
/dt=-200A/μs, T
J
=125°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/