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CTG-31S 参数 Datasheet PDF下载

CTG-31S图片预览
型号: CTG-31S
PDF下载: 下载PDF文件 查看货源
内容描述: [20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers]
分类和应用:
文件页数/大小: 3 页 / 849 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号CTG-31S的Datasheet PDF文件第2页浏览型号CTG-31S的Datasheet PDF文件第3页  
CTG-31S thru CTG-36S  
CTG-31S/CTG-32S/CTG-33S/CTG-34S/CTG-35S/CTG-36S  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers  
TO-3PN  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Bottom Side Metal Heat Sink  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,Motor Control,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
Case: Heatsink TO-3PN open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Series  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 0.61 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "UR"  
Negative  
Positive  
Suffix "S"  
Suffix "R"  
Suffix "U"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
CTG-33S CTG-35S  
CTG-34S CTG-36S  
CTG-31S  
UNIT  
SYMBOL  
CTG-32S  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
20.0  
200  
1.3  
A
A
V
IF(AV)  
(Total Device 2x10A=20A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
120  
1.7  
(Per Diode/Per Leg)  
@ 10.0 A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
C
J
70  
R
JC  
0.85  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
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