30APU06
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter
Breakdown voltage
Blocking voltage
Forward voltage
(Per Diode)
Reverse leakage
current(Per Diode)
Reverse recovery
time(Per Diode)
Symbol
V
BR
,
V
R
V
F
Test Conditions
I
R
=100µA
I
F
=30A
I
F
=30A, Tj =125°C
V
R
= V
RRM
I
R
Tj=150°C, V
R
=600V
I
F
=0.5A, I
R
=1A, I
RR
=0.25A
I
F
=1A,V
R
=30V, di/dt =200A/us
38
28
Min
600
1.30
1.05
1.60
1.40
20
200
50
35
µA
V
Typ.
Max.
Units
t
rr
ns
Thermal characteristics
Paramter
Symbol
R
θJC
Typ
0.8
Units
Junction-to-Case
℃/W
Electrical performance (typic)
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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