2SC5200
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=8A ;I
B
=0.8A
I
C
=7A ; V
CE
=5V
V
CB
=230V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=7A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
f=1MHz;V
CB
=10V
55
35
30
200
MHz
pF
MIN
230
3.0
1.5
5
5
160
TYP.
MAX
UNIT
V
V
V
µA
µA
®
h
FE-1
classifications
R
55-100
O
80-160
Mechanical Dimensions
TO-3PL
Q
−B−
0.25 (0.010)
M
T B
M
−T−
C
U
N
A
R
1
2
3
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
L
P
K
F
2 PL
G
W
D
3 PL
0.25 (0.010)
M
J
H
T B
S
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
