2SC4467
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=3A ;I
B
=0.3A
V
CB
=160V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=3A ; V
CE
=4V
I
E
=0 ; V
CB
=10V,f=1MHz
I
C
=0.5A ; V
CE
=12V
50
200
20
MIN
120
1.5
10
10
180
pF
MHz
TYP.
MAX
UNIT
V
V
µA
µA
®
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=4A;R
L
=10C
I
B1
=- I
B2
=0.4A
V
CC
=40V
0.13
3.50
0.32
As
As
As
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
