2SA940
®
ELECTRICAL CHARACTERISTICS
Ratings at 25℃
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
ambient temperature unless otherwise specified.
Test conditions
I
C
=-100μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-120V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-10V,I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V,I
B
=-500mA
V
CE
=-10V, I
C
=-0.5A
V
CB
=-10V,I
E
=0,f=1MHz
MIN
-150
-150
-5
TYP
MAX
UNIT
V
V
V
-10
-10
40
140
-1.5
-0.65
-0.75
4
55
-0.85
μA
μA
V
V
MHz
pF
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© 2006 Thinki Semiconductor Co.,Ltd.
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