THC63LVDF84B/THC63LVDF64B _Rev2.0
Electrical Characteristics
CMOS/TTL DC SPECIFICATIONS
VCC = 2.5V ~ 3.6V, Ta = -10
°C
~ +70
°C
Symbol
V
IH
V
IL
V
OH1
V
OL1
V
OH2
V
OL2
I
IN
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
High Level Output Voltage
Low Level Output Voltage
Input Current
VCC= 3.0V ~ 3.6V
I
OH
= -4mA
VCC = 3.0V ~ 3.6V
I
OL
= 4mA
VCC= 2.5V ~ 3.0V
I
OH
= -2mA
VCC = 2.5V ~ 3.0V
I
OL
= 2mA
0V £ VIN £ VCC
Conditions
Min.
2.0
GND
2.4
Typ.
Max.
VCC
0.8
Units
V
V
2.1
QQ
:
41
58
5,
LVDS RECEIVER DC SPECIFICATIONS
Symbol
V
TH
V
TL
I
IN
Parameter
Differential Input High Threshold
Differential Input Low Threshold
Input Current
66
Conditions
43
VCC = 2.5V ~ 3.6V, Ta = -10
°C
~ +70
°C
Min.
-100
±
10
Typ.
18
VOC = +1.2V
V
IN
= +2.4V/0V
VCC = 3.6V
司
,
深
1. “Absolute Maximum Ratings” are those valued beyond which the safety of the device can not be guaranteed. They
are not meant to imply that the device should be operated at these limits. The tables of “Electrical Characteristics”
specify conditions for device operation.
Copyright 2001-2003 THine Electronics, Inc. All rights reserved
圳
Supply Voltage (Vcc)
CMOS/TTL Input Voltage
CMOS/TTL Output Voltage
LVDS Receiver Input Voltage
Junction Temperature
Storage Temperature Range
Resistance to soldering heat
Maximum Power Dissipation@25
°C
科
技
有
Absolute Maximum Ratings
1
-0.3 to +4V
-0.3 to (Vcc + 0.3V)
-0.3V to (Vcc + 0.3V)
-0.3V to (Vcc + 0.3V)
+125
°C
-55
°C
to +150
°C
+260
°C
/10sec
0.5W
市
金
合
讯
限
公
4
71
44
51
8
0.4
0.4
±
10
Max.
100
THine Electronics, Inc.
19
V
V
V
V
uA
Units
mV
mV
uA