TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon High Power Ttransistors
TIP35C / TIP36C
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25
O
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
100
100
5
25
5
125
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Symbol
Test Conditions
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=4V, I
C
=1.5A
V
CE
=4V, I
C
=15A
100
25
10
60
4.0
2.0
3
V
V
MHz
Min.
Typ.
Max.
1.0
1.0
Unit
mA
mA
V
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
BE
f
T
V
CE(sat)
I
C
=25A,I
B
=5A
V
CE
=4V,I
C
=15A
V
CE
=5V,I
C
=1A
TGS [ Tiger Electronic Co.,Ltd ]
