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TIP2955 参数 Datasheet PDF下载

TIP2955图片预览
型号: TIP2955
PDF下载: 下载PDF文件 查看货源
内容描述: 其他芯片高功率Ttransistors [Complementary Silicon High Power Ttransistors]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 1 页 / 59 K
品牌: TGS [ Tiger Electronic Co.,Ltd ]
   
TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon High Power Ttransistors
DESCRIPTION
TIP3055 / TIP2955
The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in
TO-247 plastic package. It is intented for power switching circuits, series
and shunt regulators, output stages and hi-fi amplifiers.
The complementary PNP type is the TIP2955.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
100
60
7.0
15
7
90
150
-55~150
Unit
V
V
V
A
A
W
o
C
C
TO-247
Storage Temperature
o
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Symbol
Test Conditions
V
CB
=50V, I
E
=0
V
EB
=7.0V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=4.0V, I
C
=4.0A
V
CE
=4.0V, I
C
=10A
I
C
=4.0A,I
B
=0.4A
I
C
=10A,I
B
=3.3A
Base-Emitter Voltage
Transition Frequency
Min.
60
20
5
3
Typ.
Max.
0.7
5.0
70
1.0
3.0
1.8
V
MHz
V
Unit
mA
mA
V
O
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
Collector-Emitter Saturation Voltage
V
CE(sat)
V
BE
f
T
V
CE
=4.0V,I
C
=4.0A
V
CE
=10V,I
C
=0.5A