TIGER ELECTRONIC CO.,LTD
Product specification
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
DESCRIPTION
The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington
configuration mounted in Jedec TO-220 plastic package. They are intented for use in power
linear and switching applications.The complementary PNP types are TIP127 respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
TIP122 / TIP127
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
100
100
5
5.0
0.1
65
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
TO-220
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Symbol
Test Conditions
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=3V, I
C
=0.5A
V
CE
=3V, I
C
=3.0A
I
C
=3.0A,I
B
=12mA
I
C
=5.0A,I
B
=20mA
100
1000
1000
2
4
2.5
V
V
Min.
Typ.
Max.
0.5
2.0
Unit
mA
mA
V
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
V
CE
=3V,I
C
=3.0A
TGS [ Tiger Electronic Co.,Ltd ]
