E
TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
MJE3055T / MJE2955T
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
70
60
5
10
6
75
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Symbol
Test Conditions
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=0
V
CE
=4V, I
C
=4.0A
V
CE
=4V, I
C
=10.0A
I
C
=4.0A,I
B
=400mA
I
C
=10.0A,I
B
=3.3A
60
20
5
1.1
8.0
1.8
2
V
MHz
V
100
Min.
Typ.
Max.
0.3
5.0
Unit
mA
mA
V
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE(sat)
V
BE(sat)
V
CE
=4V,I
C
=4.0A
f
T
V
CE
=10V,I
C
=500mA
TGS [ Tiger Electronic Co.,Ltd ]
