TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC327/ BC328
FEATURES
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BC327
BC328
BC327
BC328
Value
-50
-30
-45
-25
-5
-800
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
TRANSISTOR (PNP)
TO-92
1. COLLECTOR
2.BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC327
BC328
Collector-emitter breakdown voltage
BC327
BC328
Emitter-base breakdown voltage
Collector cut-off current
BC327
BC328
Collector cut-off current
BC327
BC328
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
CE
= -40 V , I
B
=0
V
CE
= -20 V , I
B
=0
V
EB
= -4 V ,
V
CE
=-1 V,
V
CE
=-1 V,
I
C
=0
I
C
= -100mA
I
C
= -300mA
100
40
-0.7
-1.2
-1.2
260
12
V
V
V
MHz
pF
-0.2
-0.2
-0.1
630
uA
uA
I
CBO
V
CB
= -45 V , I
E
=0
V
CB
= -25V , I
E
=0
-0.1
-0.1
uA
Symbol
V
CBO
I
C
= -10mA ,
V
CEO
V
EBO
I
E
= -10uA, I
C
=0
I
B
=0
-45
-25
-5
V
V
Test
conditions
Min
-50
-30
Typ
Max
Unit
V
I
C
= -100uA, I
E
=0
I
C
=-500mA, I
B
= -50mA
I
C
= -500mA, I
B
=-50mA
V
CE
=-1 V, I
C
= -300mA
V
CE
= -5V, I
C
= -10mA
f =
100MHz
V
CB
=-10V,I
E
=0
f=1MHZ
f
T
Cob
CLASSIFICATION
OF
h
FE
Rank
Range
16
100-250
25
160-400
40
250-630
A,May,2011
TGS [ Tiger Electronic Co.,Ltd ]
