TIGER ELECTRONIC CO.,LTD
Product specification
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
2SC2314
DESCRIPTION
27 MHz CB Transceiver Driver Applications
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Dissipation at
Max. Operating Junction Temperature
O
l
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
tot
T
j
T
stg
Value
75
45
5.0
1.0
1.5
5.0
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-126
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Qutput Capacitance
Symbol
Test Conditions
V
CB
=40V, I
E
=0
V
EB
=4.0V, I
C
=0
I
C
=1.0mA, I
B
=0
V
CE
=5V, I
C
=0.5A
Min.
—
—
45
60
—
—
180
Typ.
—
—
—
—
—
—
—
Max.
1.0
1.0
—
320
0.6
1.2
—
25
V
V
MHz
pF
Unit
uA
uA
V
I
CBO
I
EBO
V
CEO
h
FE
V
CE(sat)
I
C
=0.5A,I
B
=50mA
V
BE(sat)
I
C
=0.5A,I
B
=50mA
f
T
C
ob
V
CE
=10V,I
C
=50mA
V
CB
=10V,f=10MHz
Hfe Classification: D=60~120 , E=100-200, F=160-320
TGS [ Tiger Electronic Co.,Ltd ]
