TIGER ELECTRONIC CO.,LTD
2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The 2N3906 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ....................................................................................................... 200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
40
40
5.0
-
-
-
650
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
250
400
850
950
-
-
300
-
-
-
4.0
Unit
V
V
V
nA
mV
mV
mV
mV
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=30V, VBE=3V
IB=1mA, IC=10mA
IB=5mA, IC=50mA
IB=1mA, IC=10mA
IB=5mA, IC=50mA
VCE=1V, IC=100uA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA,, f=100MHz
VCB=5V, IE=0, f=1MHz
MHz
pF
TIGER ELECTRONIC CO.,LTD