DS_6612_001
78M6612 Data Sheet
5.5 Timing Specifications
5.5.1 RAM and Flash Memory
Parameter
Condition
CKMPU = 4.9152 MHz
CKMPU = 1.25 MHz
CKMPU = 614 kHz
V3P3A=V3P3SYS=0
BROWNOUT MODE
-40 °C to +85 °C
25 °C
Min
5
Typ
Max
Unit
Cycles
Cycles
Cycles
CE DRAM wait states
2
1
Flash Read Pulse Width
30
100
ns
Flash write cycles
Flash data retention
Flash data retention
20,000
100
Cycles
Years
Years
85 °C
10
Flash byte writes between page or
mass erase operations
2
Cycles
5.5.2 Flash Memory Timing
Parameter
Condition
Min
Min
Typ
Max
42
Unit
µs
Write Time per Byte
Page Erase (512 bytes)
Mass Erase
20
ms
ms
200
5.5.3 EEPROM Interface
Parameter
Condition
Typ
Max
Unit
CKMPU=4.9152 MHz,
Using interrupts
78
kHz
Write Clock frequency (I2C)
CKMPU=4.9152 MHz,
“bit-banging” DIO4/5
150
500
kHz
kHz
Write Clock frequency (3-wire)
CKMPU=4.9152 MHz
5.5.4 RESET and V1
Parameter
Condition
Min
Typ
Max
Unit
µs
Reset pulse fall time
Reset pulse width
V1 Response Time
1
5
µs
+100 mv overdrive
10
37
100
µs
5.5.5 RTC
Parameter
Condition
Min
Typ
Max
Unit
Range for date
2000
2255
year
Rev. 1.2
97
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
