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73S1210F-44IM/F/P 参数 Datasheet PDF下载

73S1210F-44IM/F/P图片预览
型号: 73S1210F-44IM/F/P
PDF下载: 下载PDF文件 查看货源
内容描述: 自包含智能卡读卡器与密码键盘和电源管理 [Self-Contained Smart Card Reader with PINpad and Power Management]
分类和应用:
文件页数/大小: 126 页 / 1200 K
品牌: TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
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DS_1210F_001  
73S1210F Data Sheet  
Revision History  
Revision Date  
Description  
First publication.  
1.0  
1.1  
5/10/2007  
11/6/2007  
In Table 1, added Equivalent Circuit references.  
In Section 1.4, updated program security description to remove pre-boot  
and 32-cycle references.  
In Section 1.7.1, changed “Mcount is configured in the MCLKCtl register  
must be bound between a value of 1 to 7. The possible crystal or external  
clock are shown in Table 12.“ to “Mcount is configured in the MCLKCtl  
register must be bound between a value of 1 to 7. The possible crystal or  
external clock frequencies for getting MCLK = 96MHz are shown in Table  
11.”  
In the BRCON description, changed “If BSEL = 1, the baud rate is derived  
using timer 1.” to “If BSEL = 0, the baud rate is derived using timer 1.”  
In Section 1.7.14, removed the following from the emulator port  
description: “The signals of the emulator port have weak pull-ups. Adding  
resistor footprints for signals E_RST, E_TCLK and E_RXTX on the PCB is  
recommended. If necessary, adding 10Kpull-up resistors on E_TCLK  
and E_RXTX and a 3Kon E_RST will help the emulator operate  
normally if a problem arises.”  
In Ordering Information, removed the leaded part numbers.  
In Table 1, added the “Pin (44 QFN)” column.  
1.2  
12/15/2008  
In Table 1, added more description to the SCL, SDA, PRES, VCC, VPC,  
SEC, TEST and VDD pins.  
In Section 1.3.2, changed “FLSH_ERASE” to “ERASE” and  
“FLSH_PGADR” to “PGADDR”. Added “The PGADDR register denotes  
the page address for page erase. The page size is 512 (200h) bytes and  
there are 128 pages within the flash memory. The PGADDR denotes the  
upper seven bits of the flash memory address such that bit 7:1 of the  
PGADDR corresponds to bit 15:9 of the flash memory address. Bit 0 of  
the PGADDR is not used and is ignored.” In the description of the  
PGADDR register, added “Note: the page address is shifted left by one bit  
(see detailed description above).”  
In Table 5, changed “FLSHCRL” to “FLSHCTL”.  
In Table 5, removed the PREBOOT bit description.  
In Table 5, moved the TRIMPCtl bit description to FUSECtl and moved the  
FUSECtl bit description to TRIMPCtl.  
In Table 6, changed “PGADR” to “PGADDR”.  
In Table 7, added PGADDR.  
In Table 8, changed the reset value for RTCCtl from “0x81” to “0x00”.  
Added the RTCTrim0 and ACOMP registers. Deleted the OMP, VRCtl,  
LEDCal and LOCKCtl registers.  
In Table 7, removed the Mcount 7 row.  
In Table 50 through Table 53, changed the names of registers USRIntCtl0  
through USRIntCtl3 to USRIntCtl1 through USRIntCtl4.  
In TCON, corrected the descriptions for TCON.2 and TCON.0.  
In Section 1.7.9, added a note about USR pins defaulting as inputs after  
reset.  
Changed the register address for ATRMsB from FE21 to FE1F.  
Rev. 1.4  
125