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73S1209F-68IM/F 参数 Datasheet PDF下载

73S1209F-68IM/F图片预览
型号: 73S1209F-68IM/F
PDF下载: 下载PDF文件 查看货源
内容描述: 自包含的密码键盘,智能卡读卡器IC的UART至ISO7816 / EMV桥接IC [Self-Contained PINpad, Smart Card Reader IC UART to ISO7816 / EMV Bridge IC]
分类和应用: 电源电路电源管理电路
文件页数/大小: 123 页 / 1421 K
品牌: TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
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DS_1209F_004  
73S1209F Data Sheet  
Table 3: Flash Special Function Registers  
R/W Description  
Register  
SFR  
Address  
ERASE  
0x94  
W
This register is used to initiate either the Flash Mass Erase cycle or the  
Flash Page Erase cycle. Specific patterns are expected for ERASE in  
order to initiate the appropriate Erase cycle (default = 0x00).  
0x55 – Initiate Flash Page Erase cycle. Must be proceeded by a write to  
PGADDR @ SFR 0xB7.  
0xAA – Initiate Flash Mass Erase cycle. Must be proceeded by a write  
to FLSH_MEEN @ SFR 0xB2 and the debug port must be enabled.  
Any other pattern written to ERASE will have no effect.  
PGADDR  
FLSHCTL  
0xB7  
0xB2  
R/W Flash Page Erase Address register containing the flash memory page  
address (page 0 through 127) that will be erased during the Page Erase  
cycle (default = 0x00). Note: the page address is shifted left by one bit  
(see detailed description above).  
Must be re-written for each new Page Erase cycle.  
R/W Bit 0 (FLSH_PWE): Program Write Enable:  
0 – MOVX commands refer to XRAM Space, normal operation (default).  
1 – MOVX @DPTR,A moves A to Program Space (Flash) @ DPTR.  
This bit is automatically reset after each byte written to flash. Writes to  
this bit are inhibited when interrupts are enabled.  
W
Bit 1 (FLSH_MEEN): Mass Erase Enable:  
0 – Mass Erase disabled (default).  
1 – Mass Erase enabled.  
Must be re-written for each new Mass Erase cycle.  
R/W Bit 6 (SECURE):  
Enables security provisions that prevent external reading of flash  
memory and CE program RAM. This bit is reset on chip reset and may  
only be set. Attempts to write zero are ignored.  
Rev. 1.2  
13