DS_2901CE_031
73M2901CE Data Sheet
4.6 DC Characteristics, Vcc = 3.3 V
(Vdd stands for VPD and VPA)
Parameter
Symbol
VIL
Conditions
Min
-0.5
Nom
Max
0.8
Unit
V
Input low voltage (except OSCIN)
Input low voltage OSCIN
Input high voltage (except OSCIN)
Input high voltage OSCIN
VIL
-0.5
0.2 Vdd
+5.5
V
VIH
0.7 Vdd
0.7 Vdd
V
VIH
Vdd+0.5
0.45
V
Output low voltage (except OSCOUT) VOL
Output low voltage OSCOUT
Output high voltage (except OSCOUT) VOH
Output high voltage OSCOUT VOHOSC IOH=-3 mA
Input leakage current (except OSCIN) IIH
IOL=4 mA
V
VOLOSC IOL=3 mA
IOH=-4 mA
0.7
V
Vdd-0.45
Vdd-0.9
V
V
Vss<Vin<Vdd
Vss<Vin<Vdd
1
µA
µA
Input leakage current OSCIN
IIH
1
30
Parameter
VBG
Conditions
Vdd=3.3 V
Vdd=3.3 V
Min
Nom
Max
1.31
1.31
50
Unit
1.19
1.19
1.25
1.25
V
V
VREF
TXAP to TXAN offset
Vdd=3.3 V, steady state
mV
4.6.1 DC Supply Current, VDD = 2.7 V (Battery EOL)
Parameter
Symbol
Conditions
Min
Nom
Max
Unit
Maximum power supply,
normal operation
IDD1
30 pF/pin
9.5
10.5
mA
Maximum power supply,
Idle mode
IDD2
IDD3
30 pF/pin
30 pF/pin
900
1500
10
µA
µA
Maximum power supply,
Power Down mode
4.6.2 DC Supply Current ,VDD = 3.0 V
Parameter
Symbol
Conditions
Min
Nom
Max
Unit
Maximum power supply,
normal operation
IDD1
30 pF/pin
10.6
11.9
mA
Maximum power supply,
Idle mode
IDD2
IDD3
30 pF/pin
30 pF/pin
1.1
1.7
10
mA
Maximum power supply,
Power Down mode
µA
Rev. 3.3
11
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
