73M1866B/73M1966B Data Sheet
DS_1x66B_001
4 Applications Information
This section provides general usage information for the design and implementation of the 73M1x66B.
4.1 Example Schematic of the 73M1966B and 73M1866B
Figure 12 shows a typical application schematic for the implementation of the 73M1966B. Figure 13 shows a typical application schematic for the
implementation of the 73M1866B. Note that minor changes may occur to the reference material from time to time and the reader is encouraged to
contact Teridian for the latest information. For more information about schematic and layout design, see the 73M1866B/73M1966B Schematic and
Layout Guidelines.
C1 0.022uF, 200V
C3 0.022uF, 200V
R5 8.2, 0805
RST\
SDITHRU
SDI
SDO
INT\
SCLK
R68
1M, 0805
TP14
OFH
L1
2K Ohms @ 100 MHz
1
Q7
MMBTA42
R66
F1
1M, 0805
VCC
BR1
TRF600-150
HD04
1
+
-
C30
1nF
C17
C4
1
2
C41
220pF, 300V
+
+
Q6
BCP-56
C21
3.3uF
R58 240
E1
TIP
0.1uF
10uF
Q4
P3100SBRP
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
1
TISP4290T3BJ
MMBTA92
DCI
DCG
DCS
DCD
TXM
R XM
R XP
VPS
VNS
ACS
VBG
CS\
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
RING
CS
VPD
DR
DX
SCLK
INT
SDO
SDI
SDIT
RST
VPT
PRP
PRM
VNT
RGN
RGP
OFH
VNX
SCP
MID
VPX
SRE
SRB
R2
10M, 0805
L2
DR
DX
2K Ohms @ 100 MHz
T1
1
R12
5.1K
R3
MMBTA42
FSIO
CLKO
CLKI
SCP
4
3
1
412K, 1%
Q3
FS
R69
100K*
PCLKO
PCLKI
VNA/VND
AOUT
VPA
C14
15pF
C10
0.22uF
C26
1nF
R65 200
AUDIO
2
10
10
C13
15pF
U1
73M1916-20
NOTE: GND for C35 and
C36 should be on the host
side of the barrier
U2
73M1906B-20
C9
0.22uF
C20
1nF
C48
0.1uF
C49
100pF
R11
3K
R4
100K, 1%
R6
17.4K, 1%
VCC
SRB
1
C33
1nF
C31
0.1uF
C45
3.3uF
+
Q5
R8
R9
21K, 1%
SRE
1
52.3K, 1%
TP15
VPS
C7
4.7uF, 25V
MMBTA06
C37
0.01uF
C12
R10
174, 1%
C8
+
C38
0.1uF
C43
1nF
D1
0.1uF
MMSZ4710T1*
C39
5.6nF
4.7uF
C36
220pF, 3KV
C35
220pF, 3KV
ISOLATION BARRIER
C24
NC (TBD as needed, 3KV)
Figure 12: Recommended Circuit for the 73M1966B
28
Rev. 1.6
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
