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71M6533H-IGT/F 参数 Datasheet PDF下载

71M6533H-IGT/F图片预览
型号: 71M6533H-IGT/F
PDF下载: 下载PDF文件 查看货源
内容描述: 电能计量IC [Energy Meter IC]
分类和应用: 模拟IC信号电路
文件页数/大小: 124 页 / 1997 K
品牌: TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
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FDS_6533_6534_004  
71M6533/71M6534 Data Sheet  
5.2 Recommended External Components  
Table 63: Recommended External Components  
To Function  
AGND Bypass capacitor for 3.3 V supply  
Name  
C1  
From  
V3P3A  
V3P3D  
V3P3SYS  
V2P5  
Value  
Unit  
µF  
0.1 ±20% †  
0.1 ±20% †  
1.0 ±30%  
0.1 ±20%  
32.768  
C2  
DGND  
DGND  
DGND  
XOUT  
Bypass capacitor for 3.3 V output  
Bypass capacitor for V3P3SYS  
Bypass capacitor for V2P5  
µF  
CSYS  
C2P5  
XTAL  
µF  
µF  
kHz  
XIN  
32.768 kHz crystal – electrically similar to  
ECS .327-12.5-17X or Vishay XT26T,  
load capacitance 12.5 pF  
CXS  
CXL  
XIN  
AGND  
AGND  
Load capacitor for crystal (depends on  
crystal specs and board parasitics).  
pF  
pF  
33 ±10%  
15 ±10%  
XOUT  
Load capacitor for crystal (depends on  
crystal specs and board parasitics).  
Notes:  
1. AGND and DGND should be connected together.  
2. V3P3SYS and V3P3A should be connected together.  
3. For accuracy and EMI rejection, C1 + C2 should be 470 µF or higher.  
5.3 Recommended Operating Conditions  
Table 64: Recommended Operating Conditions  
Parameter  
Condition  
Normal Operation  
Battery Backup  
Min  
3.0  
0
Typ  
3.3  
Max  
3.6  
Unit  
V
V3P3SYS, V3P3A: 3.3 V Supply Voltage  
V3P3A and V3P3SYS must be at the  
same voltage  
3.6  
V
VBAT  
No Battery  
Externally Connect to V3P3SYS  
Battery Backup:  
BRN and LCD mod-  
es  
3.0  
3.8  
V
2.0  
-40  
3.8  
V
SLEEP mode  
Operating Temperature  
+85  
ºC  
v1.1  
© 2007-2009 TERIDIAN Semiconductor Corporation  
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