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71M6532D-IGT/F 参数 Datasheet PDF下载

71M6532D-IGT/F图片预览
型号: 71M6532D-IGT/F
PDF下载: 下载PDF文件 查看货源
内容描述: 电能计量IC [Energy Meter IC]
分类和应用: 电源电路电源管理电路
文件页数/大小: 115 页 / 2363 K
品牌: TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
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Data Sheet 71M6531D/F-71M6532D/F  
FDS 6531/6532 005  
5.2  
Recommended External Components  
Table 62: Recommended External Components  
To  
Function  
Value  
Unit  
µF  
Name  
From  
V3P3A  
V3P3D  
V3P3SYS  
V2P5  
0.1 ±20% †  
0.1 ±20% †  
1.0 ±30%  
0.1 ±20%  
32.768  
C1  
C2  
AGND  
DGND  
DGND  
DGND  
XOUT  
Bypass capacitor for 3.3 V supply  
Bypass capacitor for 3.3 V output  
Bypass capacitor for V3P3SYS  
Bypass capacitor for V2P5  
µF  
CSYS  
C2P5  
XTAL  
µF  
µF  
kHz  
XIN  
32.768 kHz crystal – electrically similar to  
ECS .327-12.5-17X or Vishay XT26T,  
load capacitance 12.5 pF  
CXS  
CXL  
XIN  
AGND  
AGND  
Load capacitor for crystal (depends on  
crystal specs and board parasitics).  
pF  
pF  
33 ±10%  
15 ±10%  
XOUT  
Load capacitor for crystal (depends on  
crystal specs and board parasitics).  
Notes:  
1. AGND and DGND should be connected together.  
2. V3P3SYS and V3P3A should be connected together.  
For accuracy and EMI rejection, C1 + C2 should be 470 µF or higher.  
5.3  
Recommended Operating Conditions  
Table 63: Recommended Operating Conditions  
Parameter  
Condition  
Min  
3.0  
0
Typ  
3.3  
Max  
3.6  
Unit  
V
V3P3SYS, V3P3A: 3.3 V Supply Voltage Normal Operation  
V3P3A and V3P3SYS must be at the  
same voltage  
Battery Backup  
No Battery  
3.6  
V
VBAT  
Externally Connect to V3P3SYS  
Battery Backup:  
BRN and LCD modes  
SLEEP mode  
3.0  
2.0  
3.8  
3.8  
V
V
Operating Temperature  
-40  
+85  
ºC  
96  
© 2005-2009 TERIDIAN Semiconductor Corporation  
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