U642B
Thermal Resistance
Parameters
Junction ambient
DIP8
SO8
Symbol
R
thJA
R
thJA
Value
110
160
Unit
K/W
K/W
Electrical Characteristics
V
Batt
= 12 V, T
amb
= 25°C, (see figure KEIN MERKER) unless otherwise specified.
Parameters
Supply voltage
Supply current
Z-diode limitation
Overvoltage
Threshold current
Threshold voltage
Relay control output
Saturation voltage
Test Conditions / Pins
Pin 8
Symbol
V
Batt
I
8
V
2
I1
V
Batt
Pin 7
I
7
= 100 mA
I
7
= 200 mA
V
7
–1.0
–1.5
–0.1
50
–3.3
–0.8
7.6
100
–0.8
7.6
–1.4/–5.4
–0.8
7.6
3.6
10.8
4.75
4
12
100
5.25
4.4
13.2
5.75
V
mA
k
W
V
V
V
Min.
9
Typ.
10
–7.6
–50
35
Max.
16.5
Unit
V
mA
V
mA
V
Reverse current
I
7
Park switch
Pin 6
Internal pull-up resistance
R
6
= 10 k
W
R
6
Switching threshold voltage
V
6
Protection diode
I
6
= –10 mA
V
6
V
6
I
6
= 10 mA
Input C
2
Pin 3
Internal resistance
R
3
Interval input,
R
2
= 2.7 to 30 k
W
Pin 2
Protection diode
I
2
= –10 mA
V
2
I
2
= 30 mA/10 ms
WIWA Input,
R
5
= 10 k
W
Pin 5
Switching threshold/
V
5
Hysteresis
Protection diode
I
5
= –10 mA
V
I
5
= 10 mA
Switching Characteristics,
R
4
= 47 k
W
to 300 k
W
, I
4
= –150
m
A
Interval time
R
3
= 0 k
W
t
2
R
3
= 10 k
W
Switch-ON time
t
on
After-wipe-time
R
4
= 130 k
W
Pin 5
t
5
W
V
V
V
s
ms
s
4 (6)
TELEFUNKEN Semiconductors
Rev. A1, 13-Feb-97
TEMIC [ TEMIC SEMICONDUCTORS ]
