U3750BM
TELEFUNKEN Semiconductors
Thermal Resistance
Parameters
Symbol
Value
70
Unit
K/W
Junction ambient
R
thJA
Electrical Characteristics
f = 1 kHz, f
= 455 kHz, R = 20 k , T
= 25°C,
clock
E
amb
unless otherwise specified, Q (Resonance factor) = 3100,
L = 6.1 mH, C = 21 pF, C = 268.5 pF, R = 5.5 . All
1
1
O
1
resistances are specified at 1%, all capacitance at 2%.
Parameters
Line voltage normal
Line voltage operation
Test Conditions / Pins
I = 8 mA
I = 15 mA
L
Symbol
Min.
2.9
4.1
Typ.
4.5
Max.
3.6
4.9
Unit
V
V
L
L
I = 28 mA
L
6.4
7.3
I = 60 mA
L
12.3
13.7
figure 3
Stabilized voltage
I = 8 mA, I = 0.6 mA
V
CC
2.0
3.3
2.5
3.5
V
L
CC
I
28 mA, I = 2.1 mA
3.7
L
CC
figure 3
Transmission
Sending gain
V
MI
= 2 mV
(note 1)
RMS
I = 28 mA (G max)
G
S
47
39.5
–6
48
41
–7
49
42.5
–8
dB
L
S
I = 60 mA (G min)
L
S
AGC
I = 28 to 60 mA
L
G
S
figure 3
Psophometric sending noise
V
V
= 0, I = 28 mA
figure 3
–73
–68
dBmp
dB
MI
L
Attenuation gain during
dialing
= 2 mV
,
A
63
70
MI
RMS
S
I = 28 mA
L
figure 3
figure 3
Microphone input
impedance (Pins 22–23)
Common mode rejection
ratio
From transmission to
dialing mode
Dynamic limiter
(anticlipping)
Output voltage swing
(peak-to-peak value)
120
80
k
I = 28 mA
L
CMRR
Step
dB
mV
figure 3
I = 28 to 60 mA
L
–100
3.0
+100
figure 3, Pin 25
= 470 nF,
= 6.8 M
C
ACL
R
ACL
= 20 mA
2.5
3.6
V
pp
L
I
28 mA,
= 8 mV
4.2
5
L
V
MI
RMS
figure 3
28 mA
Overdrive dynamic range
I
dB
L
figure 3
28 mA
Line distortion (on 600
Rev. A1: 16.07.1996
)
I
L
V
V
V
= 4.6 mV
3
5
5
MI
MI
MI
RMS
= 8 mV
%
RMS
= 80 mV
RMS
figure 3
5 (20)
TEMIC [ TEMIC SEMICONDUCTORS ]
