TFMS 5..0
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Test Conditions
Symbol
Value
–0.3...6.0
5
Unit
V
Supply Voltage
Supply Current
Output Voltage
Output Current
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
V
S
I
mA
V
S
V
O
–0.3...6.0
5
I
mA
C
O
Junction Temperature
T
100
j
Storage Temperature Range
Operating Temperature Range
Power Consumption
T
–25...+85
–25...+85
50
C
stg
T
amb
C
(T
t
85 C)
10 s, 1 mm from case
P
tot
mW
C
amb
Soldering Temperature
T
260
sd
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
V = 5 V, E = 0
Symbol
Min
0.4
Typ
0.5
1.0
35
Max
Unit
mA
mA
m
I
0.8
Supply Current (Pin 2)
S
v
SD
V = 5 V, E = 40 klx, sunlight
I
SH
S
v
Transmission Distance
Output Voltage Low (Pin 3)
Irradiance (30 – 40 kHz)
Irradiance (56 kHz)
E = 0, test signal see fig.7,
d
v
IR diode TSIP5201, I = 1.5 A
F
2
I
= 0.5 mA,E = 0.7 mW/m ,
V
250
mV
OSL
e
OSL
e min
e min
e max
f = f , t /T = 0.4
o
p
2
2
Pulse width tolerance:
t =t ±160 s, test signal (see fig.7)
po pi
E
E
0.3
0.4
0.5 mW/m
0.7 mW/m
Pulse width tolerance:
t =t ±160 s, test signal (see fig.7)
po pi
2
Irradiance
Directivity
E
20
W/m
Angle of half transmission distance
ϕ
±55
deg
1/2
Application Circuit
330 *)
+5V **)
2
3
1
4.7 F *)
TFM. 5..0
>10 k
optional
TSUS 5...
TSIP 5...
C
94 8137
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5V<V <5.5V
S
2 (6)
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
TEMIC [ TEMIC SEMICONDUCTORS ]
