DG417/418/419
Typical Characteristics
rDS(on) vs. VD and Supply Voltage
rDS(on) vs. Temperature
50
40
30
20
10
0
I
D
= –10 mA
"5 V
40
30
20
10
0
T
A
= 125_C
"8 V
"10 V
"12 V
"15 V
25_C
–55_C
"20 V
–20 –15 –10 –5
0
5
10
15
20
–15
–10
–5
0
5
10
15
V
– Drain Voltage (V)
V – Drain Voltage (V)
D
D
Leakage Currents vs. Analog Voltage
Drain Charge Injection
30
20
200
V+ = 15 V
V– = –15 V
C
L
= 10 nF
V+ = 16.5 V
V– = –16.5 V
V
= 5 V
V
V
= 5 V
IN
1 nF
L
150
100
50
L
= 0 V
DG417/418: I
DG419: I
, I
D(off) S(off)
S(off)
10
500 pF
0
100 pF
–10
–20
–30
DG417/418: I
D(on)
, I
DG419: I
D(off) D(on)
0
–50
–15
–10
–5
0
5
10
15
–15
–10
–5
V – Source Voltage (V)
S
0
5
10
15
V
or V – Drain or Source Voltage (V)
D
S
Input Switching Threshold vs. Supply Voltages
Operating Voltage Range
50
3.5
3.0
2.5
2.0
1.5
1.0
0.5
42
40
5 V CMOS
Compatible
30
20
10
V
= 7 V
L
V
= 5 V
L
F
TTL Compatible
F
V
= 0.8 V, 2.4 V
IN
CMOS Compatible
2
0
0
(V+)
(V–) –5 –10
5
10
15
20
25
–5
30
0
35
0
40
0
0
–10
Negative Supply V– (V)
= Voltages Used for Production Testing
–20
–30
–40
–15 –10
F
Siliconix
5
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
