DG417/418/419
Specificationsa
Test Conditions
A Suffix
D Suffix
Unless Otherwise Specified
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –15 V
f
V
= 5 V, V = 2.4 V, 0.8 V
Parameter
Analog Switch
Analog Signal Range
Symbol
Tempb Typc Mind Maxd Mind Maxd Unit
L
IN
e
V
Full
–15
15
–15
15
V
ANALOG
Drain-Source
On-Resistance
I
= –10 mA, V = "12.5 V
V+ = 13.5 V, V– = –13.5 V
Room
Full
20
35
45
35
45
S
D
r
W
DS(on)
Room
Full
–0.1
–0.1
–0.1
–0.4
–0.4
–0.25
–20
0.25
20
–0.25
–5
0.25
5
I
S(off)
V+ = 16.5 V, V– = –16.5 V
DG417
DG418
Room
Full
–0.25
–20
0.25
20
–0.25
–5
0.25
5
Switch Off
Leakage Current
V
= #15.5 V
D
V
= "15.5 V
S
I
D(off)
Room
Full
–0.75
–60
0.75
60
–0.75
–12
0.75
12
DG419
nA
DG417
DG418
Room
Full
–0.4
–40
0.4
40
–0.4
–10
0.4
10
Channel On
Leakage Current
V+ = 16.5 V, V– = –16.5 V
= V = "15.5 V
I
D(on)
V
S
D
Room
Full
–0.75
–60
0.75
60
–0.75
–12
0.75
12
DG419
Digital Control
Input Current
I
Full
Full
0.005
0.005
–0.5
–0.5
0.5
0.5
–0.5
–0.5
0.5
0.5
IL
V
Low
IN
mA
Input Current
High
I
IH
V
IN
Dynamic Characteristics
DG417
DG418
Room
Full
100
60
175
250
175
250
R
L
= 300 W, C = 35 pF
L
Turn-On Time
Turn-Off Time
t
ON
V
= "10 V
S
See Switching Time
Test Circuit
DG417
DG418
Room
Full
145
210
145
210
t
OFF
ns
R
R
= 300 W, C = 35 pF
L
L
Room
Full
175
250
175
250
V
V
= "10 V
= #10 V
Transition Time
t
DG419
DG419
S1
S2
TRANS
Break-Before-Make
Time Delay
= 300 W, C = 35 pF
L
L
t
D
Room
Room
Room
13
60
8
5
5
V
= V = "10 V
S1
S2
Charge Injection
Q
C
L
= 10 nF, V = 0 V, R = 0 W
pC
pF
gen
gen
Source Off
Capacitance
C
S(off)
f = 1 MHz, V = 0 V
S
DG417
DG418
Drain Off Capacitance
C
D(off)
Room
8
DG417
DG418
C
D(on)
Room
Room
30
35
Channel On
Capacitance
f = 1 MHz, V = 0 V
S
DG419
Power Supplies
Positive Supply
Current
Room
Full
0.001
1
5
1
5
I+
I–
Negative Supply
Current
Room –0.001
Full
–1
–5
–1
–5
V+ = 16.5 V, V– = –16.5 V
= 0 or 5 V
mA
Room
Full
0.001
1
5
1
5
V
IN
Logic Supply Current
Ground Current
I
L
–0.000
1
Room
Full
–1
–5
–1
–5
I
GND
Siliconix
3
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
