TABLE I. Electrical performance characteristics – continued.
Test conditions 1/
-55°C ≤ TC ≤ +125°C
+4.5 V ≤VCC ≤ +5.5 V
unless otherwise specified
Test
Symbol
Group A
subgroups type
Device
Limits
Unit
Min
15
Max
Read recovery time
Read pulse width 3/
tRR
See figure 4.
9,10,11
9,10,11
01
ns
ns
02-06
10
tRPW
01
02,05
03
50
30
20
15
04,06
Read low to data bus low Z
4/
tRLZ
9,10,11
9,10,11
01
10
5
ns
ns
02,03,05
04,06
0
01
15
5
Write high to data bus low Z tWLZ
4/ 5/
02,03,05
04,06
3
Data valid from read high
tDV
9,10,11
9,10,11
ns
ns
All
01
5
30
20
15
Read high to data bus
high Z 4/
tRHZ
02,05
03,04,06
01
65
40
30
25
50
30
20
15
15
Write cycle time
tWC
9,10,11
9,10,11
9,10,11
ns
ns
ns
02,05
03
04,06
01
Write pulse width 3/
tWPW
02,05
03
04,06
Write recovery time
tWR
01
02-06
10
See footnotes at end of table.
SIZE
STANDARD
5962-93177
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
A
REVISION LEVEL
D
SHEET
8
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
