4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-
38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits
alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535,
appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of
MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
c. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
subgroups 7 and 8 shall include verifying the functionality of the device.
d. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which may
affect the performance of the device. For device class M, procedures and circuits shall be maintained under document
revision level control by the manufacturer and shall be made available to the preparing activity or acquiring activity
upon request. For device classes Q and V, the procedures and circuits shall be under the control of the device
manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the preparing activity or
acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-up test shall be
considered destructive. Information contained in JEDEC Standard EIA/JESD78 may be used for reference.
e. Subgroup 4 (C and C
IN OUT
measurements) shall be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is 15 devices with no failures, and all input and
output terminals tested.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M.
a. Steady-state life test conditions, method 1005 of MIL-STD-883:
(1) Test condition C. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005.
(2) TA = +125°C, minimum.
(3) Test duration: 1,000 hours, except as specified in method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-
PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
29
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
