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5962-8956803XA 参数 Datasheet PDF下载

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型号: 5962-8956803XA
PDF下载: 下载PDF文件 查看货源
内容描述: [FIFO, 4KX9, 65ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28]
分类和应用: 先进先出芯片
文件页数/大小: 35 页 / 209 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
 浏览型号5962-8956803XA的Datasheet PDF文件第11页浏览型号5962-8956803XA的Datasheet PDF文件第12页浏览型号5962-8956803XA的Datasheet PDF文件第13页浏览型号5962-8956803XA的Datasheet PDF文件第14页浏览型号5962-8956803XA的Datasheet PDF文件第16页浏览型号5962-8956803XA的Datasheet PDF文件第17页浏览型号5962-8956803XA的Datasheet PDF文件第18页浏览型号5962-8956803XA的Datasheet PDF文件第19页  
TABLE I. Electrical performance characteristics Continued.  
Test  
Symbol  
Group A  
subgroups  
Device  
type  
Limits  
Unit  
Conditions  
-55°C T +125°C  
C
Min  
Max  
VSS = 0 V  
4.5 V V 5.5 V  
CC  
unless otherwise specified  
01  
140  
100  
85  
Read high to half-full  
flag high  
tRHF  
CL = 30 pF,  
See figures 4 and 5  
9,10,11  
02  
ns  
03  
04  
65  
05  
50  
06  
40  
07,08  
30  
M, D  
9 1/  
2/  
01  
02  
03  
04  
05  
06  
07  
08  
120  
80  
65  
50  
40  
30  
20  
15  
tWPF  
CL = 30 pF,  
See figures 4 and 5  
9,10,11  
ns  
Write pulse width after  
FF high  
M, D  
9 1/  
2/  
1/ When performing postirradiation electrical measurements for any RHA level TA = +25°C. Limits shown are guaranteed  
at TA = +25°C. The M and D in the test condition column are the postirradiation limits for the device types specified in the  
device types column.  
2 Preirradiation values for RHA marked devices shall also be the postirradiation values, unless otherwise specified.  
3/ If not tested, shall be guaranteed to the limits specified in table I.  
4/ Only applies to read data flow through mode.  
SIZE  
STANDARD  
5962-89568  
MICROCIRCUIT DRAWING  
A
REVISION LEVEL  
H
SHEET  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
15  
DSCC FORM 2234  
APR 97  
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