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5962-8956803ZC 参数 Datasheet PDF下载

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型号: 5962-8956803ZC
PDF下载: 下载PDF文件 查看货源
内容描述: [FIFO, 4KX9, 65ns, Asynchronous, CMOS,]
分类和应用: 先进先出芯片
文件页数/大小: 35 页 / 209 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
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1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows:
Outline letter
X
Y
Z
U
T
N
Descriptive designator
GDIP1-T28 or CDIP2-T28
GDFP2-F28
CQCC1-N32
GDIP4-T28 or CDIP3-T28
See figure 1
See figure 1
Terminals
28
28
32
28
28
28
Package style
dual-in-line package
flat package
rectangular chip carrier
dual-in-line package
dual-in-line package
flat package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Terminal voltage with respect to ground....................................
DC output current ......................................................................
Storage temperature range .......................................................
Maximum power dissipation ......................................................
Lead temperature (soldering, 10 seconds)................................
Thermal resistance, junction-to-case (θ
JC
) ................................
Junction temperature (T
J
) ..........................................................
1.4 Recommended operating conditions.
Supply voltage range (V
CC
)........................................................
Minimum high level input voltage (V
IH
) ......................................
Input low voltage (V
IL
) ................................................................
Case operating temperature range (T
C
) ....................................
1.5 Radiation features.
Maximum total dose available (dose rate = 0.1 rad/s) ---------------------------
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the
issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
10 K Rads(Si)
+4.5 V dc to +5.5 V dc
2.2 V dc minimum 2/
0.8 V dc maximum 3/
-55°C to +125°C
-0.5 V dc to +7.0 V dc
50 mA
-65°C to +155°C
1.0 W
+260°C
See MIL-STD-1835
+150°C 1/
1/ Maximum junction temperature may be increased to +175°C during burn-in and steady state life.
2/ V
IH
is 2.2 V minimum for all input pins except XI which is 3.5 V minimum.
3/ 1.5 V undershoots are allowed for 10 ns once per cycle.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
H
5962-89568
SHEET
3