1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example:
5962-89567
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|
|
Drawing number
01
|
|
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Device type
(see 1.2.1)
X
|
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Case outline
(see 1.2.2)
X
|
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Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
01
02
03
04
05
Generic number
7203
7203
7203
7203
7203
Circuit
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
Access time
120 ns
80 ns
65 ns
50 ns
40 ns
1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows:
Outline letter
X
Y
Z
Descriptive designator
GDIP1-T28 or CDIP2-T28
GDFP2-F28
CQCC1-N32
Terminals
28
28
32
Package style
dual-in-line package
flat package
rectangular chip carrier
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Terminal voltage with respect to ground...............................
DC output current .................................................................
Storage temperature range ..................................................
Maximum power dissipation (P
D
):.........................................
Lead temperature (soldering, 10 seconds)...........................
Thermal resistance, junction-to-case (
"
JC
) ..........................
Junction temperature (T
J
) .....................................................
1.4 Recommended operating conditions.
Supply voltage range (V
CC
)................................................... +4.5 V dc to +5.5 V dc
Minimum high level input voltage (V
IH
) ................................. 2.2 V dc
Maximum low level input voltage (V
IL
) ................................. +0.8 V dc 2/
Case operating temperature range (T
C
) ............................... -55
G
C to +125
G
C
-0.5 V dc to +7.0 V dc
50 mA
-65
G
C to +150
G
C
1.0 W
+260
G
C
See MIL-STD-1835
+150
G
C 1/
1/ Maximum junction temperature may be increased to +175
G
C during burn-in and steady state life.
2/ 1.5 V undershoots are allowed for 10 ns once per cycle.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
A
5962-89567
SHEET
2
TEMIC [ TEMIC SEMICONDUCTORS ]
