1N4148.1N4448
Characteristics
T = 25 C
j
Parameter
Test Conditions
I =5mA
Type
Symbol
Min
0.62
Typ
Max
0.72
1
Unit
V
1N4448
1N4148
1N4448
V
F
Forward voltage
Reverse current
F
I =10mA
F
V
V
I
V
F
F
I =100mA
F
1
V
V =20 V
R
25
50
5
nA
A
R
V =20 V, T =150 C
I
I
R
j
R
V =75 V
R
A
R
Breakdown voltage
Diode capacitance
I =100 A, t /T=0.01,
t =0.3ms
p
V
(BR)
100
45
V
R
p
V =0, f=1MHz,
C
D
4
pF
R
V =50mV
HF
Rectification efficiency
Reverse recovery time
V =2V, f=100MHz
HF
%
ns
ns
r
I =I =10mA, i =1mA
t
t
8
4
F
R
R
rr
I =10mA, V =6V,
F
R
rr
i =0.1xI , R =100
R
R
L
Typical Characteristics (Tj = 25 C unless otherwise specified)
1.2
1.0
0.8
0.6
0.4
0.2
0
1000
100
10
1 N 4148
I =100mA
F
10mA
1mA
Scattering Limit
0.1mA
60
1
T =25°C
j
0.1
120
2.0
–30
0
30
90
0
0.4
0.8
1.2
1.6
94 9169
T – Junction Temperature ( °C )
j
94 9170
V – Forward Voltage ( V )
F
Figure 1. Forward Voltage vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
2 (4)
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
TEMIC [ TEMIC SEMICONDUCTORS ]
