TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from
VHF up to Ku band.
Characteristics @ Ta = +25° C
Reverse breakdown voltage, Vb = @ 10 µA: 20 V min.
Reverse current,
Ir @ 16 V:
200 nA
Figure of
Total capacitance (pF)
merit (Q)
Ct
f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz
Vr = 4 V Vr = 1 V
Vr = 4 V Vr = 12 V Vr = 20 V
typ.
typ.
±20%
typ.
typ.
2200
2.5
1.2
0.6
0.5
2000
3.6
1.7
0.8
0.7
1700
5.2
2.4
1.1
0.9
1400
7.7
3.5
1.6
1.3
1000
11
4.9
2.2
1.7
700
16
6.9
3.0
2.4
400
23
10.2
4.5
3.5
140
34
15.2
6.6
5.1
Tuning
ratio
Ct1V/Ct12V Ct1V/CT20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
Test
conditions
Type
Case
(1)
DH76010 F27d
DH76015 F27d
DH76022 F27d
DH76033 F27d
DH76047 F27d
DH76068 F27d
DH76100 F27d
DH76150 F27d
(1)
Chip
EH76010
EH76015
EH76022
EH76033
EH76047
EH76068
EH76100
EH76150
Custom cases available on request
Temperature ranges:
Operating junction (T
j
) : -55° C to +150° C
Storage
: -65° C to +150° C
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
76010
76015
76022
76033
76047
76068
76100
76150
10
100
Cj (pF)
1.00
0.01
0.1
0.10
VR (V)
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12-39
Vol. 1
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