POWER GENERATION DIODES
Silicon m ultiplier varactor
S ILICON MULTIP LIER VARACTORS
Description
These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power
levels (stack configuration) and/or at high m ultiplication orders.
Pa ck a g e d d io d e s
Output Breakdown
freq. voltage
Junction
capacitance
Min. car. Snap-Off Thermal
Power
output
Characteristics
at 25°C
lifetime
time
resistance
Varactor
chips
per
F
V
C
τI
t
R
P
o
br
j
so
th
o
IF = 10 mA IF = 10 mA
V = 6 V
Test
Conditions
R
IR = 10 µA
f = (n)f
N/A
N/A
o
i
IR = 6 mA V = 10 V
f = 1 MHz
pF
R
package
V
ns
ps
°C/W
max
W
Type
Case
GHz
min. max min. max
min.
max
typ.
(n)
DH294
DH200 BH142b
DH270 S268-W1
DH110
DH293
DH252
DH256
DH292
DH267
M208b
1
1
1
1
1
1
1
1
1
0.2 - 2
0.5 - 2
2 - 3
2 - 4
3 - 6
45
90
80
60
50
40
30
20
15
70
140
110
90
70
60
45
35
25
4.0
5.5
4.0
3.0
2.0
0.9
0.5
0.2
0.2
7.0
7.0
5.5
4.0
3.0
2.0
1.1
0.5
0.3
125
250
160
100
60
35
20
10
6
400
1000
700
400
250
200
120
75
300
8
0.5
20.0
15.0
9.0
6.0
3.0
2.0
0.6
0.2
2
2
2
2
2
2
2
2
2
10
25
30
50
60
70
100
F27d
F60d
F27d
F27d
F27d
F27d
2 - 8
5 - 12
8 - 16
10 - 25
60
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
Storage
: -65° C to +175° C
12-45
Vol. 1
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