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EH50256 参数 Datasheet PDF下载

EH50256图片预览
型号: EH50256
PDF下载: 下载PDF文件 查看货源
内容描述: [Pin Diode, 250V V(BR), Silicon, DIE]
分类和应用: 开关二极管
文件页数/大小: 56 页 / 645 K
品牌: TEMEX [ TEMEX ]
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TUNING VARACTOR  
Plastic package, Surface Mount hyperabrupt tuning varactor  
P LASTIC PACKAGE, S URFACE MOUNT HYP ERABRUP T  
TUNING VARACTOR  
Description  
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate  
a passivated m esa technology.This fam ily is designed for a low cost m edium to high volum e m arket that  
m ay be supplied in tape and reel for autom ated pick and place assem bly on surface m ount circuit boards.  
Application  
The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of  
capacitance range. They provide the highest Q factor (low reverse series resistance). Typical  
applications include low noise narrow and m oderate frequency bandwidth applications (VCO m ainly)  
from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase  
shifters, delay lines...  
2 0 Vo lt hyp e ra b ru p t ju n c t io n va ra c t o rs  
Characteristics @ Ta=+25° C  
Reverse breakdown voltage, Vb = 20 V m in. @ 10 µA  
Reverse Current, Ir = 200 nA @ 16 V  
Tem perature ranges:  
Operating junction (Tj) : -55° C to +125° C  
Storage : -55° C to +150° C  
Total capacitance (pF)  
Ct  
Tuning  
ratio  
Test  
conditions  
Type  
f = 1 MHz  
Vr = 1 V  
typ  
f = 1 MHz  
Vr = 4 V  
±20 %  
f=1 MHz  
Vr = 12 V  
typ.  
f = 1 MHz Ct1V/ Ct12V Ct1V/ Ct20V  
Vr = 20 V  
typ.  
f = 1 MHz  
typ.  
f = 1 MHz  
typ.  
DH76010  
DH76015  
DH76022  
DH76033  
DH76047  
DH76068  
DH76100  
DH76150  
2.5  
3.6  
5.2  
1.2  
1.7  
2.4  
3.5  
4.9  
7.0  
10.0  
15.0  
0.6  
0.8  
1.1  
1.6  
2.2  
3.1  
4.5  
6.6  
0.5  
0.7  
0.9  
1.3  
1.7  
2.4  
3.5  
5.1  
4.1  
4.4  
4.7  
4.9  
5.0  
5.1  
5.2  
5.2  
4.9  
5.4  
5.8  
6.1  
6.4  
6.5  
6.7  
6.8  
8.0  
11.0  
16.0  
23.0  
35.0  
12 Vo lt hyp e ra b ru p t ju n c t io n va ra c t o rs  
Characteristics @ Ta=+25° C  
Reverse breakdown voltage, Vb = 12 V m in. @ 10 µA  
Reverse Current, Ir = 200 nA @ 8 V  
Tem perature ranges:  
Operating junction (Tj) : -55° C to +125° C  
Storage : -55° C to +150° C  
Total capacitance (pF)  
Ct  
Tuning  
ratio  
Test  
conditions  
Type  
f = 1 MHz  
Vr = 1 V  
typ  
f = 1 MHz  
Vr = 2.5 V  
±20 %  
f=1 MHz  
Vr = 4 V  
typ.  
Ct1V/ Ct2.5V Ct1V/ Ct4V  
f = 1 MHz  
typ.  
f = 1 MHz  
typ.  
DH77033  
DH77047  
DH77068  
DH77100  
DH77150  
6.0  
8.5  
12.0  
18.0  
27.0  
3.5  
4.9  
7.0  
10.0  
15.0  
1.9  
2.7  
3.8  
5.5  
8.1  
1.7  
1.7  
1.7  
1.7  
1.8  
3.1  
3.2  
3.2  
3.2  
3.3  
12-36  
Vol. 1  
SALES OFFICES : VIS IT OUR WEB S ITE AT  
h tt p ://w w w .t e m ex.n e t  
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