SILICON PIN DIODES
High voltage PIN diodes
HIGH VOLTAGE P IN DIODES
Applications
Characteristics
These devices are m ost often used to control
Radio Frequency (RF) and m icrowave signals.
Typically, high-voltage PIN diodes are found in
high power switches and phase shifters.
The controlling elem ent of a PIN diode is its
Intrinsic (l) layer. The diode itself is a sandwich,
i.e. a high resistivity l layer between highly
doped layers of P and N m aterials. With
negative bias on the l layer, the PIN diode
exhibits very high parallel resistance, e.g. acting
as a switch in the OFF position. A positive bias
causes the diode to conduct, with very low
series resistance. Certain applications im pose
specific objectives on diode construction (e.g.
in the HF and VHF band, low signal distortion
can be achieved with high Minority Carrier
Lifetim e τl).
TEMEX high-voltage PIN diode products are
designed for very high reliability, high power
handling capabilities, high isolation, and low
signal distortion, especially in the HF and VHF
bands. High-power m ultithrow switch m odules
are available for frequencies in the 1 MHz to
1 GHz range.
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat m ount, stud m ount, surface
m ount (SMD) and (on request) non-m agnetic.
12-17
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