SILICON PIN DIODES
Microwave applications
S ILICON LIMITER P IN DIODES
Description
These passivated m esa PIN diodes have a thin I layer.This series of diodes is available as chips and in
herm etic ceram ic packages. They operate as power dependent variable resistances and provide
passive receiver protection (low noise am plifiers, m ixers, and detectors).
Electrical characteristics
CHIP DIODES
PACKAGED DIODES
Minority
carrier
Breakdow n
voltage
J unction
capacitance capacitance
J unction
Series
resistance
RSF
GOLD DIA
Characteristics at 25°C
lifetim e
Ø
VBR
C
C -6 (1)
j
j0
τI
IF=10 m A
IR =10 µA
VR =0 V
VR =6 V
IF =10 m A
Test conditions
I = 6 m A
f = 1 MHz
pF
f = 1 MHz
pF
f=120 MHz
R
Type
Case
µm
V
Ω
ns
typ.
m in.
m ax
typ.
m in.
m ax
m ax
typ.
EH60033
EH60034
EH60035
EH60036
EH60037
EH60052
EH60053
EH60054
EH60055
EH60056
EH60057
EH60072
EH60074
EH60076
EH60102
EH60104
EH60106
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
25
30
35
55
65
30
35
40
50
65
80
40
50
80
50
70
110
25
25
25
25
25
50
50
50
50
50
50
70
70
70
90
90
90
50
50
50
50
50
70
70
70
70
70
70
90
90
90
120
120
120
0.14
0.20
0.28
0.45
0.70
0.10
0.14
0.20
0.28
0.45
0.70
0.10
0.20
0.45
0.10
0.20
0.45
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.06
0.12
0.23
0.06
0.12
0.23
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.08
0.17
0.40
0.08
0.17
0.40
1.8
1.5
1.0
0.9
0.7
1.8
1.4
1.1
1.0
0.9
0.8
1.7
1.4
0.9
1.7
1.2
0.8
20
20
25
30
40
30
30
35
40
50
60
50
60
100
150
250
400
(1) Other values of capacitance available on request
12-26
Vol. 1
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