SILICON PIN DIODES
Non m agnetic square ceram ic package 500 volts PIN diodes
Applications
Maxim um ratings
TEMEX non m agnetic SQP diodes are
particularly suitable for Magnetic Resonance
Im aging applications. The m axim um operating
breakdown voltage is 550 V. Several values of
total capacitance are available (beginning at
0.40 pF), together with a low forward series
resistance.
OPERATING
J UNCTION
SOLDERING
STORAGE
- 55° C
- 65° C
230° C 5 sec.
+ 150° C
+ 150° C
These devices are characterized for high power
handling, low loss and low distortion (long
carrier lifetim e design). The electrical properties
are ideal for use in RF coils which m ust produce
a hom ogeneous electrom agnetic field in the
MRI system for frequencies from a few MHz to
over 100 MHz.
Electrical characteristics
STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS
PACKAGED DIODES
Minority
Characteristics Applicable Breakdow n
Total
Forward series
resistance
Power
dissipation
carrier
lifeτtiIm e
at 25° C
voltage
voltage
capacitance
V
VBR
CT
RSF
Test
f = 1 MHz
VR = 50 V
f = 120 MHz
IF as below
IF = 10 m A
IR = 6 m A
Contact
IR < 10 µA I < 10 µA
r
conditions
surface (1)
TYPE
V
V
pF
Ω m ax
µs
W
max
typ.
typ.
max
IF=100mA IF=200mA
min.
max
DH80050-40
DH80051-40
DH80052-40
DH80053-40
DH80054-40
DH80055-40
500
500
500
500
500
500
550
550
550
550
550
550
0.40
0.55
0.85
1.05
1.25
1.45
0.45
0.65
1.05
1.20
1.35
1.55
0.70
0.60
0.40
0.35
0.30
0.25
0.65
0.55
0.35
0.30
0.27
0.22
1.1
1.5
2.0
2.5
3.0
3.5
3.0
3.5
4.0
4.0
4.5
4.5
(1) diode brazed on infinite copper heat sink
12-16
Vol. 1
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