SILICON SCHOTTKY DIODES
Silicon Schottky barrier detector diodes
S ILICON S CHOTTKY BARRIER DETECTOR DIODES
Description
Silicon Schottky barrier detector diodes are available as:
•
•
packaged diodes
chip
They are optim ized for wide band applications, in the frequency range from 1 to 18 GHz.
Electrical characteristics packaged diodes
Forward
continuous
currenT
IF
Tangential
sensitivity
Video
resistance
RV
RF
power
PRF
Frequency
range
Breakdown
voltage
VBR
Characteristics at 25°C
Test conditions
F
T
oper
ss
Video bandw idth = 1 MHz
IF = 30 µA
IR = 10 µA
V
N/ A
GHz
CW
N/ A
m A
dBm
m in.
kΩ
m W
TYPE
CASE (1)
m in.
m ax
m ax
m ax
typ.
DH340
F51
2 - 12
12 - 18
- 54
- 51
1
2
250
50
3
(1) Custom cases available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
Storage
: -65° C to +175° C
Typical tangential sensitivity vs frequency
•
•
T = + 25° C
TSS
I = 30 µA
F
(dBm)
•
Video bandwidth = 1 MHz
-56
-54
-52
-51
1
2
5
10
20
f (GHz)
12-29
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
TEMEX [ TEMEX ]
