POWER GENERATION DIODES
Step recovery diodes (SRD)
STEP RECOVERY DIODES (S .R.D.)
Description
These diodes use m esa technology and oxide passivation. They support fast switching and m ultiplier
applications:
•
•
•
•
very short pulse generation,
ultra fast waveform shaping,
com b generation,
high order m ultiplication, at m oderate power ratings.
Chip diodes
Chip and packaged diodes
Packaged diodes
Gold Breakdown Junction Min. car. Snap-Off
Thermal
resistance
Characteristics
at 25°C
dia
voltage capacitance lifetime
time
∆
V
C
t
t
R
br
j
I
so
th
Vr=6V If=10mA If=10 mA
f= 1MHz Ir = 6mA Vr=10V
Pdiss =1W
in F27d
Test conditions N/A
Ir=10µA
V
Type
Case
µm
pF
ns
ps
Type Case (1) °C/W
Other cases (1)
C =0.1pF
b
C =0.18pF C =0.12pF
b
b
typ.
min.
max
min. typ. max
max
(2)
(2)
(2)
EH541
EH542
EH543
EH544
EH545
EH546
C2a 160
C2a 220
C2a 110
C2a 140
30
50
30
50
25
15
1.5
1.5
1.0
1.0
0.4
0.3
25
40
20
35
10
6
90 140 DH541 A22e
150 250 DH542 A22e
90 140 DH543 A22e
150 250 DH544 A22e
75 100 DH545 A22e
60 80 DH546 A22e
30
25
40
35
70
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
C2a
C2a
55
40
100
(1) Custom cases available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
(2)
C
= C + C
T
j
b
Storage
: -65° C to +175° C
12-42
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
TEMEX [ TEMEX ]
