SILICON SCHOTTKY DIODES
Silicon Schottky barrier m ixer diodes
S ILICON S CHOTTKY BARRIER MIXER DIODES
Description
Silicon Schottky barrier m ixer diodes are available in the following configurations:
•
•
packaged
chip
Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between
-10 dBm and +10 dBm . Medium barrier diodes are required for applications where the LO drive level
is between -5 dBm and +15 dBm . The use of a passivated planar construction contributes to high
reliability.
Electrical characteristics packaged diodes
SSB
IF
Frequency
range
Breakdow n
voltage
VBR
Total
capacitance
CTO
VSWR
(ratio)
Noise
figure
NFSSB
Characteristics
at 25°C
Test pulse
energy
Im pedance
F
ZIF
oper
f = 30 MHZ
PLO = 1 m W
F=1 MHZ
VR =0 V
IR = 10 µA
Test conditions
N/ A
(1)
N/ A
ratio
Pulse =3 nS
Type
Case (2) GHz
dB
Ω
Ergs
m ax
V
pF
m ax
typ.
m ax
m in.
m ax
typ.
typ.
DH301
DH302
DH303
DH312
DH313
DH314
DH315
DH322
DH323
DH324
DH325
F51
F51
F51
F51
F51
F51
F51
F51
F51
F51
F51
1 - 6
1 - 6
1 - 6
6.5
6.0
5.5
7.0
6.5
6.0
5.5
7.5
7.0
6.5
6.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
400
400
400
400
400
5
5
5
5
5
5
5
5
5
5
5
3
3
3
3
3
3
3
3
3
3
3
0.40
0.40
0.40
0.25
0.25
0.25
0.25
0.17
0.17
0.17
0.17
6 - 12
6 - 12
6 - 12
6 - 12
12 - 18
12 - 18
12 - 18
12 - 18
RF Power m ax: 250 m W CW
Tem perature ranges:
Operating junction (T ) : -55° C to +150° C
j
(1) Noise figure m easurem ent conditions:
Storage
: -65° C to +175° C
P
f
= 1 m W
LO
= 30 MHz
IF
NF = 1.5 dB
IF
noise tube: 15.6 dB
dc load = 10 Ω
test frequencies: 3.0, 9.3 or 15.0 GHz
(2)
Custom cases available on request
12-30
Vol. 1
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