SILICON PIN DIODES
Microwave applications
ATTENUATOR S ILICON P IN DIODES
Description
The table below presents a single set of values from the variety of custom er options available for this
series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the custom er
to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness.
Typical applications include variable RF attenuators and AGC (Autom atic Gain Control) circuits, from
a few MHz to several GHz.
Electrical characteristics
PACKAGED
DIODES
CHIP DIODES
CHIP AND PACKAGED DIODES
I
Junction
capacitance
Reverse
current
C
Minority carrier
lifetime
Series resistance
Charact.
at 25°C
O
N
F
ZONE
THICKNESS
(1)
RSF
τ
C (2)
J
IR
I
I
F = 1 MHz
IF = 10 mA
IR = 6 mA
G
U
R
A
T
I
Test
conditions
V =100 V
F = 120 MHz
R
V = 50 V
R
µm
Standard
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
Type
µA
µs
Type
pF
package
(3)
Ω
Ω
Ω
O
N
typ.
min. max min. max min. max
typ.
max
max
min.
typ.
EH40073 C4c
EH40141 C4a
EH40144 C4c
EH40225 C4d
70
70
140
8
16
100
50
1.0
6.5 13.0
3.5 7.0
6.5 13.0
2.0
0.30
0.05
0.10
0.10
0.50
0.10
0.30
0.30
10
10
10
10
1.5
1.5
4.0
5.5
2.0 DH40073 F 27d
2.5 DH40141 F 27d
5.0 DH40144 F 27d
7.0 DH40225 F 27d
140 400 800
140 200 400
220 400 800
50
25
50
100
(1) Other I zone thicknesses available on request
(2) Other capacitance values available on request
Tem perature ranges:
Operating junction (T ) : -55° C to +175°C
j
(3) Custom cases available on request
Storage
: -65° C to +200° C
Typical series resistance vs forward current
RSF (Ω)
1000
EH40141 - EH40225
EH40144
100
EH40073
10
1
IF (mA)
0.1
1
10
100
12-25
Vol. 1
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