SILICON PIN DIODES
High voltage PIN diodes
TWO & THREE P ORT RF P IN S WITCH MODULES
Description
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 fam ily,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
Electrical characteristics
Loss
Isolation Input power
Characteristics
at 25°C
Frequency
range
Suggested bias
conditions
L
I
P
in
f (MHz)
I (m A)
f
f (MHz)
V (V)
r
Test conditions
Case
N/ A
CW
Forward Reverse
Sw itch
Type
Type
(1)
MHz
typ.
dB
dB
W
m A
typ.
V
(2)
m ax
m in.
m ax
typ.
200 MHz 100 MHz
100 m A
0.35
0.35
0 V
35
35
SH90101
SH91101
TO39
TO39
SP2T
SP2T
10 - 600
10 - 600
10
10
100
100
50
50
400 MHz 200 MHz
100 m A
0.35
0.35
0.35
0.35
0 V
25
25
25
25
SH90103
SH91103
SH92103
SH93103
BH203
BH203
BH204
BH204
SP2T
SP2T
SP3T
SP3T
20 - 1000
20 - 1000
20 - 1000
20 - 1000
100
100
100
100
200
200
200
200
150
150
150
150
100 MHz 200 MHz
200 m A
100 V
SH91107
BH403a
SP2T
20 - 500
0.20
33
1000
400
600
10 MHz 10 MHz
200 m A
0.15
0.15
200 V
37
37
SH90207
SH91207
BH405
BH405
SP2T
SP2T
1.5 - 50
1.5 - 50
1000
1000
1000
1000
700
700
(1) Series 90 and 92 : com m on anode
Series 91 and 93 : com m on cathode
(2) Custom configurations available on request
Tem perature ranges:
Operating junction (T ) : - 55° C to + 150° C
j
Storage
:
- 65° C to + 175° C
12-20
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