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DH543-54 参数 Datasheet PDF下载

DH543-54图片预览
型号: DH543-54
PDF下载: 下载PDF文件 查看货源
内容描述: [Step Recovery Diode, Silicon, PLASTIC PACKAGE-3]
分类和应用: 倍频器梳状发生器脉冲发生器光电二极管
文件页数/大小: 56 页 / 641 K
品牌: TEMEX [ TEMEX ]
 浏览型号DH543-54的Datasheet PDF文件第26页浏览型号DH543-54的Datasheet PDF文件第27页浏览型号DH543-54的Datasheet PDF文件第28页浏览型号DH543-54的Datasheet PDF文件第29页浏览型号DH543-54的Datasheet PDF文件第31页浏览型号DH543-54的Datasheet PDF文件第32页浏览型号DH543-54的Datasheet PDF文件第33页浏览型号DH543-54的Datasheet PDF文件第34页  
SILICON SCHOTTKY DIODES  
Silicon Schottky barrier m ixer diodes  
S ILICON S CHOTTKY BARRIER MIXER DIODES  
Description  
Silicon Schottky barrier m ixer diodes are available in the following configurations:  
packaged  
chip  
Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between  
-10 dBm and +10 dBm . Medium barrier diodes are required for applications where the LO drive level  
is between -5 dBm and +15 dBm . The use of a passivated planar construction contributes to high  
reliability.  
Electrical characteristics packaged diodes  
SSB  
IF  
Frequency  
range  
Breakdow n  
voltage  
VBR  
Total  
capacitance  
CTO  
VSWR  
(ratio)  
Noise  
figure  
NFSSB  
Characteristics  
at 25°C  
Test pulse  
energy  
Im pedance  
F
ZIF  
oper  
f = 30 MHZ  
PLO = 1 m W  
F=1 MHZ  
VR =0 V  
IR = 10 µA  
Test conditions  
N/ A  
(1)  
N/ A  
ratio  
Pulse =3 nS  
Type  
Case (2) GHz  
dB  
Ergs  
m ax  
V
pF  
m ax  
typ.  
m ax  
m in.  
m ax  
typ.  
typ.  
DH301  
DH302  
DH303  
DH312  
DH313  
DH314  
DH315  
DH322  
DH323  
DH324  
DH325  
F51  
F51  
F51  
F51  
F51  
F51  
F51  
F51  
F51  
F51  
F51  
1 - 6  
1 - 6  
1 - 6  
6.5  
6.0  
5.5  
7.0  
6.5  
6.0  
5.5  
7.5  
7.0  
6.5  
6.0  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
2
2
2
2
2
2
2
2
2
2
2
200  
200  
200  
200  
200  
200  
200  
200  
200  
200  
200  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
5
5
5
5
5
5
5
5
5
5
5
3
3
3
3
3
3
3
3
3
3
3
0.40  
0.40  
0.40  
0.25  
0.25  
0.25  
0.25  
0.17  
0.17  
0.17  
0.17  
6 - 12  
6 - 12  
6 - 12  
6 - 12  
12 - 18  
12 - 18  
12 - 18  
12 - 18  
RF Power m ax: 250 m W CW  
Tem perature ranges:  
Operating junction (T ) : -55° C to +150° C  
j
(1) Noise figure m easurem ent conditions:  
Storage  
: -65° C to +175° C  
P
f
= 1 m W  
LO  
= 30 MHz  
IF  
NF = 1.5 dB  
IF  
noise tube: 15.6 dB  
dc load = 10 Ω  
test frequencies: 3.0, 9.3 or 15.0 GHz  
(2)  
Custom cases available on request  
12-30  
Vol. 1  
SALES OFFICES : VIS IT OUR WEB S ITE AT  
h tt p ://w w w .t e m ex.n e t  
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