1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ELECTRICAL CHARACTERISTICS (CONT.):
Specifications measured over operating temperature
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
2.4
—
– 10
V
DD
– 0.025
—
—
—
> 0.5
—
—
—
—
—
9
1.5
—
—
0.8
10
—
0.025
12
—
—
V
V
µA
V
V
Ω
A
A
1
range with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Min
Typ
Max
Unit
Parameter
Test Conditions
2
3
4
5
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
= 18V, I
O
= 10 mA
Duty Cycle
≤
2%, t
≤
300µsec
Duty Cycle≤ 2%
t
≤
300µsec
Figure 1
Figure 1
Figure 1
Figure 1
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
—
—
—
—
—
—
40
40
40
60
8
0.6
nsec
nsec
nsec
nsec
mA
Power Supply
I
S
NOTE:
1. Switching times are guaranteed by design.
10
–8
9
8
7
6
5
Crossover Energy Loss
+5V
INPUT
0V
10%
tD1
90%
90%
VDD= 18V
4.7 µF
0.1 µF
tF
tD2
A • sec
4
3
INPUT
VDD
OUTPUT
tR
90%
6
2,4
5,7
0V
OUTPUT
10%
10%
2
CL = 1000 pF
Inverting Driver
6
t
F
+5V
INPUT
90%
10
–9
4
6
8
10
12
VDD
14
16
18
3
0V
VDD
INPUT: 100 kHz, square wave,
tRISE = tFALL
≤
10ns
10%
90%
90%
tD2
10%
tD1
Thermal Derating Curves
1600
1400
8 Pin DIP
8 Pin CerDIP
1000
800
8 Pin SOIC
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
OUTPUT
0V
10%
tR
MAX. POWER (mW)
Noninverting Driver
7
1200
Figure 1. Switching Time Test Circuit
NOTE:
The values on this graph represent the loss seen by both drivers in a package
during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.
AMBIENT TEMPERATURE (°C)
8
TELCOM SEMICONDUCTOR, INC.
4-247
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
